2SB768

SKU: 2SB768

2SB768 Transistor - CASE: TO252 MAKE: NEC

Datasheet

2SB768 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO252
Manufacturer	NEC
Vbr CBO	200
Vbr CEO	150
Max. PD (W)	2.0
Derate (Amb) (W/°C)	16m
Max. hFE	200
Min hFE	40
Ic Max. (A)	2.0
@Ic (test) (A)	400m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	4-104
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	80739

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