The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB772
View detailed images (13)

2SB772

SKU: 2SB772
2SB772 is a silicon PNP medium-power bipolar transistor in a SOT-32 (TO-126) package. It offers VCEO 30 V, collector current 3 A, transition frequency 100 MHz and 12.5 W power dissipation. Typical uses include voltage regulation, relay driving, audio power amplification and DC-DC switching.
Price:
£9.59 Inc. VAT (£7.99 Ex. VAT)
£9.59 Inc. VAT (£7.99 Ex. VAT)
Qty
  • Last 130 pieces Ready to Ship
  • More pieces shipped in 14 days
?
Datasheet
2SB772 Datasheet
Product specifications
Replacement For 2SB89
Type Transistor Silicon PNP
Case TO126
Manufacturer ST Microelectronics - STM
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 10
Derate (Amb) (W/°C) 80m
Max. hFE 400
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 80M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 55 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 20415
Back