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2SB779
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2SB779

SKU: 2SB779
2SB779 Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
2SB779 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 200m
C(ob) (F) 15p
Derate (Amb) (W/°C) 2.0m
hfe 350=
Ic Max. (A) 0.5
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 125
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 343678
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