2SB789

SKU: 2SB789

2SB789 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SB789 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
Max. hFE	330
Ic Max. (A)	0.5
@Ic (test) (A)	150m
Polarity	PNP
Trans. Freq (Hz) Min.	120M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	65
SKU	343682

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