The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB790
View detailed images (5)

2SB790

SKU: 2SB790
2SB790 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics
Datasheet
2SB790 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT32
Manufacturer Matsushita Electronics
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 600m
C(ob) (F) 15p
Derate (Amb) (W/°C) 5.2m
hfe 350=
Ic Max. (A) 0.5
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 135
@Ic (A) 500m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 116631
Back