2SB796

SKU: 2SB796

2SB796 Transistor Silicon PNP CASE: TO3 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	NEC
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	200
Derate (Amb) (W/°C)	1.6
Max. hFE	200
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	-2
Icbo Max. @Vcb Max. (A)	-50u
Polarity	PNP
Trans. Freq (Hz) Min.	14M
Oper. Temp (°C) Max.	140
@VCE (V)	-5
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	450 pF
Transition Frequency (ft):	7 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SKU	556320

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