2SB800

SKU: 2SB800

2SB800 Transistor - Case: SP0 Make: NEC

Datasheet

2SB800 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SP0
Manufacturer	NEC
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	2.0
Derate (Amb) (W/°C)	10m
Max. hFE	400
Min hFE	90
Ic Max. (A)	300m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100n
@Temp. (test) (°C)	50
VRRM	800
Polarity	PNP
1-Cycle Surge Current (A)	50
@Temp. (test) for Vf)	25
Vf Max.	1.0
Ir @25°C	10u
I(out) (If AVG) Max.	2.0
Trans. Freq (Hz) Min.	100M
@Volts (test) (V)	800
@If (test)	1.0
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	2 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	160 °C
Collector Capacitance (Cc)	13 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SMD Transistor Code	FK_FL_FM
SKU	343691

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