2SB806

SKU: 2SB806

2SB806 Transistor - Case: SP0 Make: NEC

Datasheet

2SB806 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SP0
Manufacturer	NEC
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	2.0
Max. hFE	400
Min hFE	90
Ic Max. (A)	0.7
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	75M
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	2 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	17 pF
Transition Frequency (ft):	35 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SMD Transistor Code	KP_KQ_KR
SKU	343694

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