2SB807

SKU: 2SB807

2SB807 Transistor Silicon PNP CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SB807 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	1.0
Max. hFE	450
Ic Max. (A)	50m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	180 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	343695

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