2SB812

SKU: 2SB812

2SB812 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	60
Derate (Amb) (W/°C)	480m
Max. hFE	250
Min hFE	40
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Polarity	PNP
Tr Max. (s)	1.3u+
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	116632

Back