2SB812A
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2SB812A

SKU: 2SB812A
2SB812A Transistor Silicon PNP CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Generic
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 60
Derate (Amb) (W/°C) 480m
Max. hFE 250
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Polarity PNP
Tr Max. (s) 1.3u+
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 766913
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