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2SB814
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2SB814

SKU: 2SB814
2SB814 Transistor Silicon PNP CASE: SOT23 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 200m
Derate (Amb) (W/°C) 2.0m
hfe 700=
Ic Max. (A) 20m
Icbo Max. @Vcb Max. (A) 100m
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 260
SKU 549796
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