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2SB816D
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2SB816D

SKU: 2SB816D
2SB816D Transistor Silicon PNP CASE: TO220 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Sanyo Semiconductor
Vbr CBO 150
Vbr CEO 120
Max. PD (W) 80
Max. hFE 120
Min hFE 60
Ic Max. (A) 8.0
@Ic (test) (A) 1
Icbo Max. @Vcb Max. (A) 0.1m
Polarity PNP
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 220 pF
Transition Frequency (ft): 7.5 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 766911
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