2SB827Q

2SB827Q

SKU: 2SB827Q
2SB827Q Transistor Silicon PNP CASE: TO218 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 60
Max. hFE 140
Min hFE 70
Ic Max. (A) 7.0
@Ic (test) (A) 1
Icbo Max. @Vcb Max. (A) 0.1m
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 20
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 766896
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