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2SB828
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2SB828

SKU: 2SB828
2SB828 Transistor Silicon PNP CASE: TO218 MAKE: Sanyo Semiconductor
Datasheet
2SB828 Datasheet
Product specifications
Equivalent 2SB828S
Type Transistor Silicon PNP
Case TO218
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 80
Max. hFE 200
Min hFE 60
Ic Max. (A) 12
@Ic (test) (A) 1
Icbo Max. @Vcb Max. (A) 0.1m
Polarity PNP
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 20
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 117010
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