| Weight |
0.01 kg
|
| Equivalent |
2SB828S |
| Type |
Transistor Silicon PNP |
| Case |
TO218 |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
60 |
| Vbr CEO |
50 |
| Max. PD (W) |
80 |
| Max. hFE |
200 |
| Min hFE |
60 |
| Ic Max. (A) |
12 |
| @Ic (test) (A) |
1 |
| Icbo Max. @Vcb Max. (A) |
0.1m |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
10M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
20 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
80 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
12 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
70 |
| SKU |
117010 |