2SB83

SKU: 2SB83

2SB83 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Hitachi
Vbr CBO	40
Vbr CEO	32
Min hFE	70-
Ic Max. (A)	3.0
@Ic (test) (A)	.70
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	.40k
Oper. Temp (°C) Max.	100
@VCE (V)	1.5i
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	12 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	80 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	766891

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