2SB833
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2SB833

SKU: 2SB833
2SB833 Transistor Silicon PNP CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO1
Manufacturer Toshiba
Vbr CEO 80
Max. PD (W) 150
Min hFE 1.0k
Ic Max. (A) 30
@Ic (test) (A) 20
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 150m
Derate Above 25°C 1.2
Trans. Freq (Hz) Min. 10M
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 394925
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