2SB834

SKU: 2SB834

2SB834 Transistor Silicon PNP CASE: TO220 MAKE: Toshiba

Price:

£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

2SB834 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
t(f) Max. (S)	800n-
Max. hFE	200
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	9.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	134 pF
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	80749

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