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2SB834O
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2SB834O

SKU: 2SB834O
2SB834O Transistor Silicon PNP CASE: TO220 MAKE: IMTM
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer IMTM
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
Max. hFE 120
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Polarity PNP
Tr Max. (s) 800n
Trans. Freq (Hz) Min. 3.0M
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 134 pF
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 766886
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