2SB835

SKU: 2SB835

2SB835 Transistor Silicon PNP CASE: SOT32 MAKE: Matsushita Electronics

Datasheet

2SB835 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT32
Manufacturer	Matsushita Electronics
Vbr CBO	20
Vbr CEO	18
Max. PD (W)	500m
C(ob) (F)	40p
Derate (Amb) (W/°C)	4.0m
hfe	360=
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	140
@Ic (A)	500m
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	40 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	116637

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