2SB836

SKU: 2SB836

2SB836 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CBO	25
Vbr CEO	25
Max. PD (W)	20
Derate (Amb) (W/°C)	160m
Min hFE	20
Ic Max. (A)	2.5
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	2
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	766884

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