2SB837

SKU: 2SB837

2SB837 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	20
Max. hFE	320
Min hFE	60
Ic Max. (A)	2.5
@Ic (test) (A)	500m
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	766882

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