2SB837L

SKU: 2SB837L

2SB837L Transistor Silicon PNP CASE: TO126 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Generic
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	20
Max. hFE	320
Min hFE	60
Ic Max. (A)	2.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	4-33
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	160
SKU	766878

Back