2SB838

SKU: 2SB838

2SB838 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CBO	50
Vbr CEO	50
Max. PD (W)	20
Max. hFE	200
Min hFE	60
Ic Max. (A)	2.0
@Ic (test) (A)	50m
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	65 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	766873

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