2SB849

SKU: 2SB849

2SB849 Transistor Silicon PNP CASE: TO218 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	NEC
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	80
Derate (Amb) (W/°C)	640m
Max. hFE	200
Min hFE	40
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	14M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	340 pF
Transition Frequency (ft):	7 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	80751

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