The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB85
View detailed images (13)

2SB85

SKU: 2SB85
2SB85 Transistor Germanium PNP CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Hitachi
Vbr CBO 40
Vbr CEO 25
Min hFE 14
Ic Max. (A) 5.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
Derate Above 25°C 769m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 542105
Back