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2SB850
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2SB850

SKU: 2SB850
2SB850 Transistor Silicon PNP CASE: TO218 MAKE: Fuji Electric
Datasheet
2SB850 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Fuji Electric
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 50
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 2
Polarity PNP
@VCE (V) 5
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 340 pF
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 116639
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