2SB855

SKU: 2SB855

2SB855 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CEO	50
Max. PD (W)	20
Max. hFE	200
Min hFE	35
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Polarity	PNP
Trans. Freq (Hz) Min.	35M
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	17 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	116640

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