2SB856

SKU: 2SB856

2SB856 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi

Price:

£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

2SB856 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Hitachi
Vbr CEO	50
Max. PD (W)	25
Max. hFE	320
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Polarity	PNP
Trans. Freq (Hz) Min.	35M
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	17 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	20319

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