The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SB856A

2SB856A

SKU: 2SB856A
2SB856A Transistor Silicon PNP CASE: SOT78 MAKE: Hitachi
Product specifications
Type Transistor Silicon PNP
Case SOT78
Manufacturer Hitachi
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 25
Derate (Amb) (W/°C) 200m
Max. hFE 70
Min hFE 35
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 35M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 17 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 542953
Back