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2SB858
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2SB858

SKU: 2SB858
2SB858 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Datasheet
2SB858 Datasheet
Product specifications
Equivalent 2SB858D
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 200
Min hFE 60
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 7.5 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 20320
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