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2SB859
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2SB859

SKU: 2SB859
2SB859 Transistor Silicon PNP CASE: TO220 MAKE: Hitachi
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
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Datasheet
2SB859 Datasheet
Product specifications
Equivalent 2SB859C
Type Transistor Silicon PNP
Case TO220
Manufacturer Hitachi
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 500
Min hFE 100
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 80752
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