| Weight |
0.01 kg
|
| Equivalent |
2SB861 |
| Type |
Transistor Silicon PNP |
| Case |
TO220 |
| Manufacturer |
Hitachi |
| Vbr CBO |
200 |
| Vbr CEO |
150 |
| Max. PD (W) |
30 |
| Derate (Amb) (W/°C) |
240m |
| Max. hFE |
200 |
| Min hFE |
100 |
| Ic Max. (A) |
2.0 |
| @Ic (test) (A) |
50m |
| Icbo Max. @Vcb Max. (A) |
1.0u |
| Polarity |
PNP |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
30 W |
| Maximum Collector-Base Voltage |Vcb| |
150 V |
| Maximum Collector-Emitter Voltage |Vce| |
150 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
30 pF |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
766821 |