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2SB870
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2SB870

SKU: 2SB870
2SB870 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Matsushita Electronics
Vbr CBO 130
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 260
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 800n
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 116642
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