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2SB887
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2SB887

SKU: 2SB887
2SB887 Transistor Silicon PNP CASE: TO3PN MAKE: Sanyo Semiconductor
Datasheet
2SB887 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO3PN
Manufacturer Sanyo Semiconductor
Vbr CEO 100
Max. PD (W) 70
Max. hFE 4k-
Min hFE 1.5k
Ic Max. (A) 10
@Ic (test) (A) 5
Icbo Max. @Vcb Max. (A) 0.1m
Mat. Silicon Logic
Polarity PNP
Trans. Freq (Hz) Min. 20M
@VCE (test) 3
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 180 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 343705
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