2SB896

SKU: 2SB896

2SB896 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics

Datasheet

2SB896 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	40
Vbr CEO	20
Max. PD (W)	35
Derate (Amb) (W/°C)	280m
Max. hFE	260
Min hFE	60
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Tr Max. (s)	500n
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	150
SKU	116646

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