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2SB89H
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2SB89H

SKU: 2SB89H
2SB89H Transistor Germanium PNP CASE: TO7 MAKE: Hitachi
+ VAT 20% for UK purchases
Product specifications
Equivalent 2SB89
Type Transistor Germanium PNP
Case TO7
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 250m
hfe 60
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) 6.0
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 766801
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