2SB906Y
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2SB906Y

SKU: 2SB906Y
2SB906Y Transistor Silicon PNP CASE: TO218 MAKE: Toshiba
Product specifications
Equivalent 2SB906
Type Transistor Silicon PNP
Case TO218
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.0
Derate (Amb) (W/°C) 8.0m
t(f) Max. (S) 500n
Max. hFE 200
Min hFE 100
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) .50u
Trans. Freq (Hz) Min. 9.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 766787
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