2SB907

SKU: 2SB907

2SB907 Transistor Silicon PNP CASE: TO251 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SB907 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO251
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	1.0
Derate (Amb) (W/°C)	8.0m
t(f) Max. (S)	.25u
Min hFE	2.0k
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	20u
Polarity	PNP
Tr Max. (s)	.25u
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	80765

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