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2SB910M
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2SB910M

SKU: 2SB910M
2SB910M Transistor Silicon PNP CASE: Standard MAKE: Rohm Semiconductor
Datasheet
2SB910M Datasheet
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 1.0
Max. hFE 390
Min hFE 82
Ic Max. (A) 700m
Polarity PNP
Trans. Freq (Hz) Min. 100M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SKU 343715
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