2SB929

SKU: 2SB929

2SB929 Transistor Silicon PNP CASE: TO262 MAKE: Matsushita Electronics

Datasheet

2SB929 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SB929A
Type	Transistor Silicon PNP
Case	TO262
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	35
Derate (Amb) (W/°C)	280m
Max. hFE	250
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.0m
Icbo Max. @Vcb Max. (A)	200u
Polarity	PNP
Tr Max. (s)	1.2u
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343729

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