2SB930

SKU: 2SB930

2SB930 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics

Datasheet

2SB930 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	40
Derate (Amb) (W/°C)	320m
Max. hFE	250
Min hFE	40
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	400u
Polarity	PNP
Tr Max. (s)	500n
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343731

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