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2SB930A
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2SB930A

SKU: 2SB930A
2SB930A Transistor Silicon PNP CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SB930A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Max. hFE 250
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 400u
Polarity PNP
Tr Max. (s) 500n
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343732
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