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2SB935
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2SB935

SKU: 2SB935
2SB935 Transistor Silicon PNP CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SB935 Datasheet
Product specifications
Equivalent 2SB935A
Type Transistor Silicon PNP
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 35
Derate (Amb) (W/°C) 280m
Max. hFE 260
Min hFE 60
Ic Max. (A) 10
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343736
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