2SB936

SKU: 2SB936

2SB936 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics

Datasheet

2SB936 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	Matsushita Electronics
Vbr CBO	40
Vbr CEO	20
Max. PD (W)	40
Derate (Amb) (W/°C)	320m
Max. hFE	260
Min hFE	60
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Tr Max. (s)	500n
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343738

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