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2SB938
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2SB938

SKU: 2SB938
2SB938 Transistor Silicon PNP CASE: TO251 MAKE: Matsushita Electronics
Datasheet
2SB938 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer Matsushita Electronics
Vbr CEO 60
Max. PD (W) 40
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 4.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 320m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 343741
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