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2SB939
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2SB939

SKU: 2SB939
2SB939 Transistor Silicon PNP CASE: TO218 MAKE: Matsushita Electronics
Datasheet
2SB939 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO218
Manufacturer Matsushita Electronics
Vbr CEO 60
Max. PD (W) 45
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 360m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 343742
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