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2SB939A
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2SB939A

SKU: 2SB939A
2SB939A Transistor Silicon PNP CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SB939A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO262
Manufacturer Matsushita Electronics
Vbr CEO 80
Max. PD (W) 45
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity PNP
Derate Above 25°C 360m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 368851
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