2SB944

SKU: 2SB944

2SB944 Transistor Silicon PNP CASE: TO220 MAKE: Matsushita Electronics

Datasheet

2SB944 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	130
Vbr CEO	80
Max. PD (W)	35
Derate (Amb) (W/°C)	280m
Max. hFE	260
Min hFE	60
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Tr Max. (s)	800n
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	343747

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