2SB945

SKU: 2SB945

2SB945 Transistor Silicon PNP CASE: TO220 MAKE: Wingshing

Datasheet

2SB945 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Wingshing
Vbr CBO	130
Vbr CEO	80
Max. PD (W)	40
Derate (Amb) (W/°C)	320m
Max. hFE	260
Min hFE	60
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Tr Max. (s)	500n
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	117012

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